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DS: Fachverband Dünne Schichten

DS 22: Thin Film Applications

DS 22.4: Vortrag

Donnerstag, 4. April 2019, 10:15–10:30, H39

Novel deposition approach of MoS₂ thin films for hydrogen evaluation reaction — •Talha Nisar, Torsten Balster, Francis Oliver Vinay Gomes, and Veit Wagner — Jacobs University Bremen gGmb, Campus Ring 1, 28759, Bremen

Electrolytic hydrogen evolution reaction is a promising way to store solar energy. It requires suitable materials as a catalyst to lower over-potential and minimize energy consumption. MoS₂ has been demonstrated to be a very promising candidate for hydrogen evolution reaction. In this work, MoS₂ films are deposited by spin coating using a Molybdenum (V) chloride precursor solution on Au and ITO substrates. The thickness of the deposited films is linearly dependent on the concentration of precursor. After spin-coating the thin layers are converted to MoS₂ by post annealing at temperature above 450^∘C with an additional sulfur source. The thickness of the films ranges from 2nm to 50nm. Raman measurements show E₂g and A₁g modes of MoS₂. The modes have reduced FWHM for higher annealing temperatures, confirming the formation of high quality crystals. This interpretation is supported by XPS, UV-Vis, AFM and XRD measurements. Finally hydrogen evolution activity is determined in dependence of the thickness.