Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

DS: Fachverband Dünne Schichten

DS 22: Thin Film Applications

DS 22.5: Vortrag

Donnerstag, 4. April 2019, 10:30–10:45, H39

Noise properties of oxygen engineered HfO_2−x based Resistive Random Access Memory devices — •Eszter Piros¹, Martin Lonsky², Stefan Petzold¹, Eric Jalaguier³, Emmanuel Nolot³, Christelle Charpin³, Jens Müller², and Lambert Alff¹ — ¹Institute of Materials Science, Advanced Thin Film Technology, Technische Universität Darmstadt, Darmstadt, Germany — ²Institute of Physics, Goethe-University Frankfurt, Frankfurt am Main, Germany — ³CEA, LETI, Grenoble, France

Resistive Random Access Memory (RRAM) is one of the most promising candidates amongst emerging non-volatile memories because of their fast read/write speed, high endurance, and good retention properties. One of the biggest challenges, however, is to improve device reliability and variability, highlighting the necessity of a comprehensive physical picture on the resistive switching mechanism. Therefore, we comparatively investigated the noise properties of oxygen engineered stoichiometric and highly oxygen deficient hafnia [1], by electrical fluctuation spectroscopy to explore the physical nature of conduction in the high and low resistive state, finding a strong dependence on stoichiometry, voltage bias amplitude, and DC cycling. The investigations were carried out in both the time- and frequency domain. The observation of multilevel- and anomalous random telegraph noise and corresponding Lorentzian spectra are also discussed.

[1] S. U. Sharath, Adv. Funct. Mater. 27, 1700432 (2017)