Regensburg 2019 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 24: Thin Film Properties: Structure, Morphology and Composition (XRD, TEM, XPS, SIMS, RBS, AFM, ...) Part I

DS 24.3: Vortrag

Donnerstag, 4. April 2019, 15:30–15:45, H39

Mono- and few-layer MoS₂ films on muscovite mica substrates — •Jonathan Rommelfangen, Evandro Lanzoni, Daniel Siopa, Phillip Dale, Michele Melchiorre, and Alex Redinger — Physics and Materials Science Research Unit, University of Luxembourg, Luxembourg

In this contribution, we discuss the growth of MoS₂ films on muscovite mica substrates. This substrate is used to ensure a van der Waals epitaxy and furthermore ensures a flat and well-defined surface to characterize the films via atomic force microscopy (AFM). The MoS₂ films are synthesized via DC sputtering of metallic Molybdenum on 2.5 × 2.5 cm² mica sheets, followed by a sulfurization in a tubular furnace. The sulfurization has been carried out at different temperatures and dwell times in order to find the optimum growth temperature. The thickness of the Mo layer has been varied in order to study the growth mode in detail. Raman measurements performed with different excitation wavelengths (325 nm, 442 nm, 532 nm) corroborate a transition from monolayer/bilayer MoS₂ to bulk-like MoS₂ as a function of the Mo precursor thickness, independent of the sulfurization temperature. For all temperatures used in this study (500^∘C-700^∘C) we observe a transition from a 2D to a 3D island growth mode. Based on our AFM measurements we propose a growth mechanism and discuss the results in the context of the observed Raman shifts. The AFM and Raman measurements will be supplemented with Photoluminescence measurements.