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DS: Fachverband Dünne Schichten
DS 24: Thin Film Properties: Structure, Morphology and Composition (XRD, TEM, XPS, SIMS, RBS, AFM, ...) Part I
DS 24.4: Vortrag
Donnerstag, 4. April 2019, 15:45–16:00, H39
X-ray absorption spectroscopy studies on transition metal dichalcogenide heterostructures — •Florian Rasch1, Danielle Hamann2, Gavin Mitchson2, David Johnson2, Javier Herrero3, Manuel Valvidares3, Manuel Richter1, Bernd Büchner1,4, and Jorge Hamann-Borrero1,4 — 1Leibniz Institute for Solid state and Materials Research Dresden, Dresden, Germany — 2Department of Chemistry and Materials Science, University of Oregon, Eugene, Oregon, United States — 3ALBA Synchrotron Light Source, Cerdanyola del Valles, Spain — 4Department of Physics, TU Dresden, Dresden, Germany
Over the last years transition metal dichalcogenides (TMDs) provided a vast playground for the exploration of emergent physics in the crossover form 3D bulk to 2D monolayer. A novel way to investigate this crossover is given by TMD heterostructures with chemical formula (MX)n/(TX2)m with metal M, chalcogen X and transition metal T, where n and m denote the number of consecutive layers. The compositions M, T and dimensionalities n, m can be precisely controlled, allowing for systematic studies of the materials electronic properties as a function of those parameters. We have performed X-ray absorption spectroscopy measurements at the Nb L2,3 edges on (MSe)1/(NbSe2)1 (M = Bi, Sn, Pb) and observed pronounced differences in the spectral lineshape as compared to the XAS of bulk NbSe2 as well as systematic changes within the heterostructures. We will discuss details of these changes in the electronic structure based on our XAS measurements in combination with density functional theory (DFT) calculations.