Regensburg 2019 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
DS: Fachverband Dünne Schichten
DS 24: Thin Film Properties: Structure, Morphology and Composition (XRD, TEM, XPS, SIMS, RBS, AFM, ...) Part I
DS 24.5: Vortrag
Donnerstag, 4. April 2019, 16:00–16:15, H39
K and Ba implantation in FeSb3 thin films — •Felix Timmermann, Marc Lindorf, and Manfred Albrecht — Universität Augsburg, Universitätsstraße 1, 86135 Augsburg, Germany
Increasing interest in the development of alternative energy sources led to an extended research in the field of thermoelectricity. For a good efficiency of thermoelectric generators, materials with special transport properties are needed. The goal is to find compounds with a large Seebeck coefficient α, high electrical conductivity σ, and low thermal conductivity κ. Skutterudites, such as FeSb3, are materials that meet those criteria well. The insertion of filler atoms like K or Ba in the metastable FeSb3 leads to stabilization of this phase and has the potential to improve the thermoelectric properties further [1].
In this work, as a preface to prepare polycrystalline skutterudite thin films, amorphous Fe-Sb films were deposited on SiO2(100nm)/Si(100) and glass substrates by molecular beam deposition. After ion implantation with K and Ba, the films were annealed while measuring the electrical conductivity and Seebeck coefficient. The composition and film thickness before and after implantation were compared by Rutherford Backscattering Spectrometry (RBS) and Energy Dispersive X-Ray spectrometry (EDX). Structural characterization by X-Ray Diffraction (XRD) and Transmission Electron Microscopy (TEM) gives insight to the formation of the desired skutterudite and secondary phases.
[1] N. Stetson et al., J. of Solid State Chem. 91, 140-147 (1991)