Regensburg 2019 – scientific programme

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DS: Fachverband Dünne Schichten

DS 25: Thin Film Properties: Structure, Morphology and Composition (XRD, TEM, XPS, SIMS, RBS, AFM, ...) Part II

DS 25.6: Talk

Friday, April 5, 2019, 10:45–11:00, H32

MBE growth of oxide thin films on silicon — •Luqman Mustafa — ZIK SiLi-nano, Martin-Luther-University Halle-Wittenberg, Halle, Germany

Complex oxide thin films can exhibit many different physical properties. The epitaxial growth of these films on silicon enables the integration of their properties in silicon technology for the development of novel devices and optimizing existing technologies. Lately, ferroelectric oxide thin films has gained more interest in photonic applications, for example, waveguid structures made of BaTiO3 on silicon-on-oxide (SOI) wafers were developed exhibiting strong linear electro-optical effect, with effective Pockels coefficient higher than commercial optical modulators.

The greatest challenge in the epitaxial growth of oxides on silicon is the formation of amorphous silicon oxide layer at the interface once the silicon surface is exposed to oxygen, making the intended heteroepitaxy of the film on silicon extremely difficult. Here we report on the optimized growth conditions of complex oxide thin films on SOI substrates. BaTiO3 thin films were grown using MBE technique. BaO,and SrTiO3 were used as a buffer layer to reduce strain. the thin film morphology, structural, and ferroelectric properties were investigated.