Regensburg 2019 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 25: Thin Film Properties: Structure, Morphology and Composition (XRD, TEM, XPS, SIMS, RBS, AFM, ...) Part II

DS 25.7: Vortrag

Freitag, 5. April 2019, 11:15–11:30, H32

Orbital character of the mobile and localized electron states at the LAO/STO interface — •Alla Chikina^1,2, Frank Lechermann³, Marius-Adrian Husanu^1,4, Marco Caputo¹, Claudia Cancellieri⁵, Thorsten Schmitt¹, Milan Radovic¹, and Vladimir N. Strocov¹ — ¹Swiss Light Source, Paul Scherrer Institute, Villigen CH-5232, Switzerland — ²IFW Dresden, P.O. Box 270116, Dresden D-01171, Germany — ³Institut für Theoretische Physik, Universität Hamburg, Jungiusstrasse 9, Hamburg DE-20355, Germany — ⁴National Institute of Materials Physics, Atomistilor 405A, Magurele RO-077125, Romania — ⁵Empa, Swiss Federal Laboratories for Materials Science & Technology, Ueberlandstrasse 129, Duebendorf CH-8600, Switzerland

Interfacing different transition-metal oxides opens a route to functionalizing their rich interplay of electron, spin, orbital, and lattice degrees of freedom for electronic and spintronic devices. Electronic and magnetic properties of a mobile two-dimensional electron system (2DES) of SrTiO3-based interfaces are strongly influenced by oxygen vacancies, where strongly correlated localized electrons in the in-gap states (IGSs) coexist with noncorrelated delocalized 2DES. Here, we use resonant soft-X-ray photoelectron spectroscopy to prove the eg character of the IGSs, as opposed to the t2g character of the 2DES in the paradigmatic LaAlO3/SrTiO3 interface. Supported by a self-consistent combination of density functional theory and dynamical mean field theory calculations, this experiment identifies local orbital reconstruction that goes beyond the conventional eg-vs-t2g band ordering.