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DS: Fachverband Dünne Schichten

DS 25: Thin Film Properties: Structure, Morphology and Composition (XRD, TEM, XPS, SIMS, RBS, AFM, ...) Part II

DS 25.8: Vortrag

Freitag, 5. April 2019, 11:30–11:45, H32

PFM and SHG study of ferroelastic twin domain crossings in PbZr_0.2Ti_0.8O₃ — •Philippe Tückmantel¹, Grégory Taupier², Kokou D. Dorkenoo², Joshua C. Agar³, Lane W. Martin³, Patrycja Paruch¹, and Salia Cherifi-Hertel² — ¹DQMP University of Geneva, Geneva, Switzerland — ²University of Strasbourg CNRS, IPCMS, Strasbourg, France — ³University of California, Berkeley, DMSE, USA

Domains walls in ferroelectrics can exhibit properties absent from their parent material, such as a higher electric conductivity, photovoltaic effect, and ferromagnetic ordering, leading to a surge in interest in potentially using these nanoscale interfaces as active device components. Both theoretical and experimental studies have recently focused on the complex structure of these domain walls, underlying the rich functional behaviour. For example, SHG experiments have confirmed the non-Ising character of 180^∘ domain walls in PbZr_0.2Ti_0.8O₃ and LiTaO₃ which locally show Néel and Bloch like polarisation, respectively. However, relatively little is known about how such domain walls respond to disorder, variations of electrostatic boundary conditions or strain, which strongly influence polarisation in bulk and thin film samples, and which could affect the emergent properties of the domain walls.

Here, we report on the interplay of disorder and electromechanical effects, using SHG and PFM to focus on the crossings of 180^∘ domain walls and ferroelastic twin domain walls in PbZr_0.2Ti_0.8O₃ grown by PLD on a DyScO₃ substrates, highlighting their complex polarisation patterns and the key role of strain.