Regensburg 2019 – scientific programme
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DS: Fachverband Dünne Schichten
DS 2: Focus Session: Oxide Semiconductors for Novel Devices (joint session HL/DS)
Monday, April 1, 2019, 09:30–12:45, H34
The class of semiconducting oxides materials is currently investigated in terms of promising applications in devices, including low temperature processed amorphous thin films for bendable electronics and display technology as well as highly crystalline materials such as the wide band group-III sesquioxides. Possible devices applications are UV and DUV photo sensors, power electronics and even memristors. This session sets a focus on physical properties of semiconductor oxide materials, their growth methods and heterostructures for demonstrator devices.
Organizers: Holger Eisele (TU Berlin) and Holger von Wenckstern (Uni Leipzig)
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09:30 | DS 2.1 | Invited Talk: The role of suboxide kinetics and thermodynamics for the catalysis and facet formation during the molecular beam epitaxy of oxides — •Oliver Bierwagen |
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10:00 | DS 2.2 | Invited Talk: Is There a Perspective of p-type Doping in Gallium Oxide? — •David Rogers, Ferechteh Teherani, Philippe Bove, Eric Sandana, Ryan McClintock, and Manijeh Razeghi |
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10:30 | DS 2.3 | Invited Talk: Highly rectifying contacts on Ga2O3, In2O3 and (In,Ga)2O3 thin films — •Daniel Splith |
11:00 | 15 min. break | ||
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11:15 | DS 2.4 | Invited Talk: Understanding the impact of vibrations and defects on the optical properties of phosphors — •P. Erhart, C. Linderälv, D Åberg, Y.-C. Lin, M Bettinelli, N. C. George, S. F. Parker, and M. Karlsson |
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11:45 | DS 2.5 | Invited Talk: atomically resolved termination engineering of electronic states at oxide semiconductors — •Ya-Ping Chiu |
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12:15 | DS 2.6 | Invited Talk: Nanoscale Control of Native Point Defects and Doping in Oxide Semiconductors — •Leonard Brillson |