Regensburg 2019 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 3: Layer Properties: Electronic, Optical and Mechanical Properties
DS 3.7: Vortrag
Montag, 1. April 2019, 11:15–11:30, H39
Impedance spectroscopy at tunnel junctions with adjacent solid-state electrolyte layer — Richard Marquardt1, •Jürgen Carstensen2, George Popkirov3, Finn Zahari1, Hermann Kohlstedt1, and Martin Ziegler4 — 1Chair of Nanoelectronics, Faculty of Engineering, Kiel University, Germany — 2Chair of Functional Nanomaterials, Faculty of Engineering, Kiel University, Germany — 3Central Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, Bulgarian — 4Micro- and Nanoelectronic Systems, Electrical Engineering and Information Technology, Ilmenau University of Technology, Germany
Memristive devices for neuromorphic networks and non-volatile memories are getting a rapidly increased amount of attention in the last couple of years for neuromorphic applications, one promising candidate is the double barrier Nb/Al/Al2O3 /NbOx/ Au memristive device. Recent studies showed evidence, that the memristive character is based on a filamentary-free, homogenous interfacial switching mechanism. Here, mobile oxygen ions confined within the 2.5 nm thin NbOx layer alter the Schottky barrier of the top NbOx/Au interface. Therefore lead to the resistance change in the order of two magnitudes at 0.7V together with a change in the theshold voltage by a factor of five. In order to proof this model Impedance spectroscopy was applied to correlate the inner electronic and ionic process with the observed I-V characteristics. Evidence has been found that the Schottky interface is the active interface, which is responsive for the resistive switching of the device. The Al2O3 tunneling barrier is modeled as a linear resistance.