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DS: Fachverband Dünne Schichten

DS 8: Instrumentation Micro-/Nano-Analysis and Lithography/Structuring (joint session KFM/DS/O)

DS 8.4: Vortrag

Montag, 1. April 2019, 16:10–16:30, PHY 5.0.21

High-Resolution High-Sensitivity Characterization using SIMS based Correlative Microscopy — •Santhana Eswara, Alisa Pshenova, Jean-Nicolas Audinot, and Tom Wirtz — Advanced Instrumentation for Ion Nano-Analytics, MRT, Luxembourg Institute of Science and Technology, L-4422 Belvaux, Luxembourg

Technological materials are being increasingly engineered by optimizing the structure at the nanometer-level and the chemical composition at the dopant-level. Therefore, analytical techniques capable of both high-resolution and high-sensitivity are indispensable. Transmission Electron Microscopy (TEM) offers excellent lateral resolution down to atomic scale, but the analytical techniques typically available in a TEM such as EDX or EELS do not have the sensitivity to analyze trace elements (e.g. dopants). In comparison, Secondary Ion Mass Spectrometry (SIMS) is well-known for high-sensitivity analysis of materials down to the ppm level. However, the lateral resolution of SIMS is fundamentally limited by the ion-solid interaction volume to ~ 10 nm. Recently we developed SIMS in a Helium Ion Microscope (HIM) and demonstrated a SIMS lateral resolution of ~ 15 nm[1]. While this is a remarkable breakthrough, it is still 2 to 3 orders-of-magnitude poorer in comparison to high-resolution techniques such as TEM imaging. To overcome this limitation, we developed correlative microscopy methods combining SIMS imaging with high-resolution techniques such as TEM and HIM (SE mode). We will discuss the HIM-SIMS and in-situ TEM-SIMS correlative techniques[2]. [1] D. Dowsett et al, Anal. Chem., 89, 8957-8965, 2017 [2] L. Yedra et al, Sci. Rep. 6, 28705, 2016