Regensburg 2019 – scientific programme
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DS: Fachverband Dünne Schichten
DS 9: Layer Deposition (ALD, MBE, Sputtering, ...)
DS 9.1: Talk
Monday, April 1, 2019, 15:00–15:15, H39
MBE growth of є-Ga2O 3 by using a Sn catalyst-layer — •Alexander Karg1, Max Kracht2, Sebastian Benz2, Fabian Michel2, Marcus Rohnke3, Stephan Figge1, Jörg Schörmann2, Marco Schowalter1, Jürgen Janek3, Andreas Rosenauer1, and Martin Eickhoff1 — 1Institute of Solid State Physics, University of Bremen, Bremen, Germany — 2Institute of Experimental Physics 1, Justus Liebig University, Giessen, Germany — 3Physical-Chemical Institute, Justus Liebig University, Giessen, Germany
MBE-growth of є-Ga 2 O 3 on c-plane Al 2 O 3 by MBE is only possible in metal-rich growth conditions, which normally leads to the formation and subsequent desorption of the volatile suboxide Ga 2 O, thus hampering layer-growth. Additional supply of Sn during growth expands the growth window and enables the formation of є-Ga 2 O 3 in this regime.
To further investigate the role of Sn during growth we significantly reduced the Sn exposure time and deposited an ultrathin (<1 ML) Sn layer before Ga 2 O 3 growth.
We found that this Sn layer is sufficient to enable the formation of є-Ga 2 O 3 thin films without Sn incorporation, demonstrating the catalytic role of Sn in the growth process. The impact of this technique for processing technology of є-Ga 2 O 3 devices will also be discussed.