Regensburg 2019 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 9: Layer Deposition (ALD, MBE, Sputtering, ...)

DS 9.3: Vortrag

Montag, 1. April 2019, 15:30–15:45, H39

Epitaxial growth of SrTiO3 thin films by MOVPE — •Aykut Baki, Julian Stöver, Klaus Irmscher, Toni Markurt, Martin Albrecht, and Jutta Schwarzkopf — Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2 12489 Berlin, Germany

SrTiO3 represents a prototype of complex perovskites. It provides a high dielectric constant and a switchable/tunable resistivity, which makes it potentially interesting for resistive switching memories (ReRAM). A large number of studies exists about physical thin film deposition by pulsed laser deposition (PLD). However, SrTiO3 thin films are rarely deposited by metal-organic vapor phase epitaxy (MOVPE), although this method provides the epitaxy of smooth and defect-poor thin films since growth takes place near the thermodynamic equilibrium. The approach of our study is to grow defect-free epitaxial SrTiO3 films and to fundamentally investigate on the correlation between deposition conditions and film properties. Well-ordered SrTiO3 thin films are epitaxially grown by MOVPE on (100) SrTiO3, (110)o DyScO3 and (110)o NdGaO3 substrates under different strain conditions by the use of Sr(tmdh)2-tetraglyme and Ti(iso-propoxid)2(tmdh)2 precursors. The structural properties of SrTiO3 thin films grown under a wide range of growth parameters by MOVPE and PLD are analyzed by high-resolution X-ray diffraction, transmission electron microscopy, atomic force microscopy and their impact on electrical properties are shown by resistivity and capacitance-voltage measurements.