Regensburg 2019 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 9: Layer Deposition (ALD, MBE, Sputtering, ...)

DS 9.5: Vortrag

Montag, 1. April 2019, 16:00–16:15, H39

Ion-beam sputtered oxide buffer layers as a viable alternative to thin films grown with atomic layer deposition — •Martin Becker, Florian Kuhl, Philip Klement, Angelika Polity, Jörg Schörmann, Peter J. Klar, and Sangam Chatterjee — Institute of Experimental Physics I and Center for Materials Research, Heinrich-Buff-Ring 16, Justus Liebig University Giessen, D-35392 Giessen, Germany

Sputtering deposition techniques are well suited to fabricate polycrystalline oxide thin-films on different substrates as they reliably offer homogeneous and reproducible layer growth at high deposition rates. Conventional RF and DC sputtering, however, are subject to limitations based on substrate heating and impurity incorporation. Ion-beam sputter-deposition (IBSD) tackles these issues and yields thin films of high compactness and adherence. Therefore, in many applications, IBSD has become a viable alternative to conventional plasma-based deposition.

Here, we report on a system for the ion beam processing of semiconductors with the focus on buffer layer growth. Its task is to increase the quality of the growth of the functional layer itself by creating a smoother surface or providing a surface triggering a preferential crystal orientation of the functional layer. We discuss different oxide-based model systems. Further, we will compare the results with buffer layers grown with atomic layer deposition (ALD), since in most cases ALD is the method of choice when it comes to the ability to produce accurate thicknesses and uniform surfaces.