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DS: Fachverband Dünne Schichten
DS 9: Layer Deposition (ALD, MBE, Sputtering, ...)
DS 9.6: Talk
Monday, April 1, 2019, 16:15–16:30, H39
Correlation between sputter deposition parameters and I-V curves in memristive devices — •Finn Zahari1, Sven Gauter2, Julian Strobel3, Julia Cipo2, Felix Georg2, Thomas Mussenbrock4, Lorenz Kienle3, Holger Kersten2, and Hermann Kohlstedt1 — 1Nanoelectronics, Faculty of Engineering, Kiel University, Germany — 2Plasma Technology, Department of Physics, Kiel University, Germany — 3Synthesis and Real Structure, Faculty of Engineering, Kiel University, Germany — 4Electrodynamics and Physical Electronics, Electrical Engineering and Information Science, BTU Cottbus-Senftenberg, Germany
Neuromorphic analogue systems are recently highly investigated to realize novel bio-inspired computing architectures which may have advantages in power dissipation and scalability over traditional transistor technologies. Double barrier memristive devices (DBMD) with the layer sequence Nb/Al/Al2O3/NbOx/Au are promising candidates to emulate synaptic behavior in analog circuits. Selector-device free crossbar-arrays based on DBMDs have been already realized for pattern recognition tasks. The recognition performance of such systems strongly depends on the individual electrical I-V characteristics of the DBMDs. In this contribution we show evidence that crucial parameters of the process plasma, such as floating potential of the substrate, electron temperature and energy influx, are strongly correlated with the I-V characteristics of the individual devices. These results are supported by transmission electron microscopy (TEM). Our findings enable a new pathway for the development of plasma engineered memristive devices.