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17:30 |
HL 12.1 |
Charge transport in bottom-up synthesized graphene nanoribbon networks — Alexander Tries, •Leo Schnitzspan, Nils Richter, Zongping Chen, Kamal Asadi, Akimitsu Narita, Klaus Müllen, and Mathias Kläui
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17:30 |
HL 12.2 |
Defect-induced photoluminescence of WS2 monolayers — •Aswin Asaithambi, Roland Kozubek, Guenther Prinz, Francesso Reale, Cecelia Mattevi, Marika Schleberger, and Axel Lorke
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17:30 |
HL 12.3 |
Probing long-lived spin polarization in n-doped MoSe2 monolayers. — •Michael Kempf, Markus Schwemmer, Philipp Nagler, Andreas Hanninger, Christian Schüller, and Tobias Korn
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17:30 |
HL 12.4 |
Edge currents driven by terahertz radiation in graphene in the quantum Hall regime — •Susanne Candussio, Helene Plank, Mikhail Durnev, Johanna Pernul, Kathrin-Maria Dantscher, Erwin Mönch, Andreas Sandner, Jonathan Eroms, Dieter Weiss, Vasily V. Belkov, Sergey A. Tarasenko, and Sergey Ganichev
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17:30 |
HL 12.5 |
Optical Contrast Analysis and Electrical Properties of Thin ZrSe3-Films — •Lars Thole, Christopher Belke, Sonja Locmelis, Johannes C. Rode, Peter Behrens, and Rolf J. Haug
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17:30 |
HL 12.6 |
Magnetotransport properties of weakly coupled double trilayer graphene — •Xiao Xiao, Sung Ju Hong, Christopher Belke, and Rolf J. Haug
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17:30 |
HL 12.7 |
Fabrication of twisted graphene heterostructures: Different layer sequences and novel device configurations — •Benjamin Gajeufsky, Xiao Xiao, Sung Ju Hong, Christopher Belke, and Rolf J. Haug
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17:30 |
HL 12.8 |
From multi- to monolayer: monitoring the time-evolution of laser-induced thinning of MoS2 layers by Raman and photoluminescence spectroscopy — •Christian Tessarek, Oleg Gridenco, Jan Müßener, Stephan Figge, Kathrin Sebald, Jürgen Gutowski, and Martin Eickhoff
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17:30 |
HL 12.9 |
Strain induced optical effects of WS2 monolayers — •Marcel Ney, Aswin Asaithambi, Lukas Madauß, Günther Prinz, Marika Schleberger, and Axel Lorke
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17:30 |
HL 12.10 |
Induced defect states in supported and freestanding MoS2 monolayers — •Sven Mehrkens, Oleg Gridenco, Kathrin Sebald, Christian Tessarek, Martin Eickhoff, and Jürgen Gutowski
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17:30 |
HL 12.11 |
Raman spectra vs. transport properties in graphene field-effect transistors suitable for applications in ultrasensitive biodetection — •Daniel Hüger, David Kaiser, Christof Neumann, Thomas Weimann, and Andrey Turchanin
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17:30 |
HL 12.12 |
Enhanced Photoluminescence from Monolayer WS2 Excitons with a 2D-material-air-GaP in-plane Microcavity — Oliver Mey, Franziska Wall, •Lorenz Maximilian Schneider, Frederik Walla, Amin Soltani, Hartmut G. Roskos, Ni Yao, Peng Quing, Wei Fang, and Arash Rahimi-Iman
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17:30 |
HL 12.13 |
Band Gap Determination and Induced Conductivity in Thin Films of ZrS3 — •Christopher Belke, Sonja Locmelis, Johannes C. Rode, Hennrik Schmidt, Bastian Hoppe, Peter Behrens, and Rolf J. Haug
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17:30 |
HL 12.14 |
Structural Dynamics of Rhenium Disulphide Studied by Ultrafast Electron Diffraction — Arne Ungeheuer, •Ahmed Hassanien, Marlene Adrian, Arne Senftleben, and Thomas Baumert
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17:30 |
HL 12.15 |
Charge transport in graphene and graphene nanoribbons on hexagonal boron nitride as field effect transistor devices — •Leo Schnitzspan, Alexander Tries, Marie-Luise Braatz, and Mathias Kläui
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17:30 |
HL 12.16 |
Metal gate vs graphene gate in two-dimensional (2D) MoS2 FET — •Vaishnavi Kateel, Zahra Fekri, Phanish Chava, Himani Arora, Kenji Wanatnabe, Takashi Taniguchi, and Artur Erbe
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17:30 |
HL 12.17 |
Three-dimensional electronic band dispersion in bulk black phosphorus — •Charlotte Sanders, Klara Volckaert, Deepnarayan Biswas, Marco Bianchi, Jill Miwa, Søren Ulstrup, and Philip Hofmann
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17:30 |
HL 12.18 |
Manipulating transition-metal dichalcogenide monolayers with proximity effects — •Lanqing Zhou, Sven Borghardt, and Beata Kardynal
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17:30 |
HL 12.19 |
Highly sensitive micro-cavity based absorption spectroscopy of low dimensional materials — •Thomas Hümmer, Jonathan Noé, Alexander Högele, Theodor W. Hänsch, and David Hunger
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17:30 |
HL 12.20 |
First principles study of Ta2NiSe5, a possible candidate excitonic insulator, using GW and hybrid functional approaches — •Lukas Windgätter, Simone Latini, Hannes Hübener, and Angel Rubio
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17:30 |
HL 12.21 |
Optical characterization of implanted transition metal dichalcogenides monolayers — •Minh Bui, Jhih-Sian Tu, Manuel Auge, Sven Borghardt, Eoghan O’Connell, Ursel Bangert, Hans Hofsäss, and Beata Kardynał
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17:30 |
HL 12.22 |
Investigation of mechanical properties of Carbon Nanomembrane using wrinkling based metrology — •Himanshu P. Patel, Bernhard Alexander Glatz, Maria Kuellmer, Zian Tang, Andreas Winter, Andrey Turchanin, and Andreas Fery
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17:30 |
HL 12.23 |
Quantum Spin Hall Insulator Phase in Graphene/Bismuthene Quantum Well Heterostructure — Hamoon Fahrvandi, •Ebrahim Nadimi, and Michael Schreiber
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17:30 |
HL 12.24 |
Coupled Organic Microcavities with Balanced Gain and Loss for Experimental Studies on Non-Hermitian Physics — •Karla Roszeitis, Markas Sudzius, Hartmut Fröb, Jan Carl Budich, and Karl Leo
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17:30 |
HL 12.25 |
High frequency impact ionization and nonlinearity of photocurrent induced by intense terahertz radiation in HgTe-based quantum well structures — •Stefan Hubmann, Sebastian Gebert, Grigory Budkin, Vasily Belkov, Eugenius Ivchenko, Alexandr Dmitriev, Susanne Baumann, Maximilian Otteneder, Dimitry Kozlov, Nikolay Mikhailov, Sergey Dvoretsky, Ze-Don Kvon, and Sergey Ganichev
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17:30 |
HL 12.26 |
Phase-coherent transport and gating of top-down etched bulk-insulating topological insulator nanowires — •Dingxun Fan, Matthias Rössler, Oliver Breunig, Andrea Bliesener, Gertjan Lippertz, Alexey Taskin, and Yoichi Ando
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17:30 |
HL 12.27 |
Plasmonic modes in micro-ribbon arrays of topological insulators — •Philipp Warzanowski, Muhamad Saleh, Andrea Bliesener, Gertjan Lippertz, Yoichi Ando, and Markus Grüninger
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17:30 |
HL 12.28 |
The contribution has been withdrawn.
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17:30 |
HL 12.29 |
Topological Hall effect in magnetically doped topological insulator thin films — •Gertjan Lippertz, Andrea Bliesener, Alexey Taskin, Lino Pereira, and Yoichi Ando
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17:30 |
HL 12.30 |
Topological surface states in α -Sn: from 3D Dirac semimetal to quasi-2D few-layer stanene — •Victor A. Rogalev, Johannes Jehn, Felix Reis, Florian Adler, Maximilian Bauernfeind, Jonas Erhardt, Liam B. Duffy, Thorsten Hesjedal, Moritz Hoesch, Gustav Bihlmayer, Jörg Schäfer, and Ralph Claessen
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17:30 |
HL 12.31 |
Native point and layer defect in magnetically doped topological insulator multilayers — •Jakub Šebesta, Pavel Baláž, and Karel Carva
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17:30 |
HL 12.32 |
Boosting the Sensitivity and Selectivity of a Nanotube-Based NO2 Gas Sensor: A First-Principles Investigation — Seyed Shahim Vedaei, •Ebrahim Nadimi, and Michael Schreiber
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17:30 |
HL 12.33 |
Fabrication and properties of carbon-nanodot-based planar microcavities — •Lukas Trefflich, Frank Dissinger, Chris Sturm, Siegfried R. Waldvogel, Marius Grundmann, and Rüdiger Schmidt-Grund
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17:30 |
HL 12.34 |
Redox and electrochemical doping of nanoscale semiconductors — •Klaus Eckstein, Florian Oberndorfer, and Tobias Hertel
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17:30 |
HL 12.35 |
Improving the spin coherence of shallow nitrogen-vacancy centers (NVs) by CVD-diamond overgrowth — •Christoph Findler, Christian Osterkamp, Johannes Lang, Josef Souček, Milos Nesladek, and Fedor Jelezko
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17:30 |
HL 12.36 |
Magnetic resonance of electrochemically fabricated carbon quantum dots — •Theresa Grünleitner, Jonathan Zerhoch, Martin Stutzmann, Martin S. Brandt, and Zhenhui Kang
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17:30 |
HL 12.37 |
Rydberg-like states in organic semiconductor rods — •Aswin Asaithambi, Daichi Okada, Guenther Prinz, Yohei Yamamoto, and Axel Lorke
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17:30 |
HL 12.38 |
C8-BTBT air gap field-effect transistors — •Michael Bretschneider, Bernd Büchner, and Yulia Krupskaya
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17:30 |
HL 12.39 |
Rubrene single-crystal based charge-transfer interfaces — •Bipasha Debnath, Eter Mgeladze, Alexey Popov, Yevhen Karpov, Anton Kiriy, Bernd Büchner, and Yulia Krupskaya
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17:30 |
HL 12.40 |
Comparing thickness dependence and transport properties of the organic semiconductors F16CoPc and F16CuPc — •Mareike Dunz, Karsten Rott, Jan Schmalhorst, and Günter Reiss
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17:30 |
HL 12.41 |
New insight into electronic excitations of metal phthalocyanines — •Louis Philip Doctor, Marco Naumann, Lukas Graf, Nikolay Kovbasa, and Martin Knupfer
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17:30 |
HL 12.42 |
Concept of multi-stage ballistic rectifiers — •Nina Niedworok and Ulrich Kunze
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17:30 |
HL 12.43 |
Sign-alternating photoconductivity and magnetoresistance oscillations induced by terahertz radiation in HgTe quantum wells — •Maximilian Otteneder, Ivan Dmitriev, Susanne Candussio, Maxim Savchenko, Dmitry Kozlov, Vasily Bel’kov, Ze-Don Kvon, Nikolay Mikhailov, Sergey Dvoretsky, and Sergey Ganichev
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17:30 |
HL 12.44 |
Probing energy transfer in TMDC/organic heterostructures using Femtosecond Electron Diffraction — •Helene Seiler, Daniela Zahn, Soohyung Park, Thomas Vasileiadis, YingPeng Qi, Norbert Koch, and Ralph Ernstorfer
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17:30 |
HL 12.45 |
In situ study of the surface preparation of metamorphic GaAsP buffers for III-V-on-Si integration — •Ammar Tummalieh, Agnieszka Paszuk, Oliver Supplie, Alexander Heinisch, Peter Kleinschmidt, and Thomas Hannappel
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17:30 |
HL 12.46 |
Heterostructures of 2D Materials and Organic Semiconductors for Ambipolar Field Effect Transistors — •Sirri Batuhan Kalkan, Henrik Hecht, Antony George, Andrey Turchanin, and Bert Nickel
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17:30 |
HL 12.47 |
Luminescence of indium residues after local droplet etching and thermal annealing on GaAs (111)A substrates — •Julian Ritzmann, Nandlal Sharma, Dirk Reuter, Henning Moldenhauer, Jörg Debus, Marc Portail, Arne Ludwig, and Andreas D. Wieck
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17:30 |
HL 12.48 |
Ab-initio dynamics of highly excited amorphous graphene — Sergej Krylow, Othmane Benhayoun, •Lukas Nöding, Marie Kempkes, Tobias Zier, and Martin E. Garcia
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17:30 |
HL 12.49 |
Time-dependent photo-conductivity in DCNQI radical ion salts — •Lisa Schraut-May, Sebastian Hammer, Florian Hüwe, and Jens Pflaum
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17:30 |
HL 12.50 |
Ab-Initio Electronic Structure Parameters of Thermoelectric Mg2X-Mg2Y (X,Y=Si,Ge,Sn) Substitutional Alloys — •Juan Guerra, Marcel Giar, Carsten Mahr, Michael Czerner, and Christian Heiliger
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17:30 |
HL 12.51 |
DFT calculation of zero-field splitting for high-spin defects in solids — •Timur Biktagirov, Wolf Gero Schmidt, and Uwe Gerstmann
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17:30 |
HL 12.52 |
Phonon-mediated optical absorption of BAs using first principles simulation methods — •Ivona Bravić and Bartomeu Monserrat
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17:30 |
HL 12.53 |
Theoretical Description of Two-Dimensional Spectroscopy in a CdTe Quantum Dot doped with a Single Mn Ion — •Magnus Molitor, Tilmann Kuhn, and Doris Reiter
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17:30 |
HL 12.54 |
OAM spectroscopy of fractional exciton polariton vortices — •Bernd Berger, Marius Kahlert, Daniel Schmidt, and Marc Aßmann
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17:30 |
HL 12.55 |
PbWO4 ground- and excited-state properties from first-principles calculations — •Johannes Bilk, Kris Holtgrewe, Christof Dues, and Simone Sanna
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17:30 |
HL 12.56 |
Linear and non-linear optical properties of adamantane-derived molecular clusters — •Christof Dues and Simone Sanna
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17:30 |
HL 12.57 |
Voigt exceptional-points in anisotropic ZnO-based photonic structures — •Evgeny Krüger, Steffen Richter, Sebastian Henn, Heinrich-Gregor Zirnstein, Jesús Zúñiga-Pérez, Christiane Deparis, Lukas Trefflich, Chris Sturm, Bernd Rosenow, Marius Grundmann, and Rüdiger Schmidt-Grund
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17:30 |
HL 12.58 |
Template-Assisted Fabrication of Spectrum-Programmable Superlattice Photonic Crystals for Efficient Solar Energy Harvesting — •Zhiqiang Zeng, Rui Xu, and Yong Lei
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17:30 |
HL 12.59 |
A high power (11 W), tunable (1.45 - 1.65 µm) OPCPA for THz generation in organic crystals — •Ivanka Grguras, Torsten Golz, Michael Schulz, Jan Heye Buss, Robert Riedel, and Mark James Prandolini
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17:30 |
HL 12.60 |
Structural, Energetic and Electronic Properties of Lanthanum and Fluorine Doped HfO2/SiO2 Gate Stack of MOSFETs — Arash Rahimi, •Ebrahim Nadimi, and Michael Schreiber
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17:30 |
HL 12.61 |
From Hybrid Si Nanowire Transistors to Artificial Neurons — •Khrystyna Nych, Eunhye Baek, Taiuk Rim, Larysa Baraban, and Gianaurelio Cuniberti
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17:30 |
HL 12.62 |
Towards Dopant-free MOSFETs by Silicon Nitride Interface Engineering — •Lena Hellmich, Benjamin Richstein, and Joachim Knoch
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17:30 |
HL 12.63 |
Temperature dependent electrical characteristics of a junction field effect transistor for cryogenic sub-attoampere charge detection — •Hüseyin Azazoglu, Paul Graf, Anahita Kavangary, Meike Flebbe, Kornelia Huba, Hermann Nienhaus, and Rolf Möller
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17:30 |
HL 12.64 |
Magnetotransport in nanostructured narrow-gap semiconductors — •Olivio Chiatti, Christian Riha, Johannes Boy, Aron Castro Martinez, Sergio Pezzini, Steffen Wiedmann, Christian Heyn, Wolfgang Hansen, and Saskia F. Fischer
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17:30 |
HL 12.65 |
1-D and 2-D Multi-Gate Devices: Tailoring the Potential Landscape on the Nanoscale — •Thomas Grap and Joachim Knoch
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17:30 |
HL 12.66 |
Temperature-robust terahertz quantum cascade lasers using Ge/SiGe — Thomas Grange, •Stefan Birner, Giacomo Scalari, Giovanni Capellini, Douglas Paul, Monica De Seta, and Michele Virgilio
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17:30 |
HL 12.67 |
Statistical studies of random silicon-germanium alloys using electronic structure calculations — •Willi Roscher, Florian Fuchs, Christian Wagner, Jörg Schuster, and Sibylle Gemming
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17:30 |
HL 12.68 |
Highly doped silicon for photonic and plasmonic applications — •Jura Rensberg, Kevin Wolf, Martin Hafermann, and Carsten Ronning
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17:30 |
HL 12.69 |
Phosphorous doped Germanium nanowires — •Ahmad Echresh, Shima Jazavandi Ghamsari, Yordan M. Georgiev, and Lars Rebohle
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17:30 |
HL 12.70 |
Control of the photoluminescence of the silicon vacancy color center in 4H-silicon carbide by electric fields — •Lena Bergmann, Maximilian Rühl, Christian Ott, Michael Krieger, and Heiko B. Weber
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17:30 |
HL 12.71 |
Optical Spin Injection in Silicon — •Eduard Sauter
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