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HL: Fachverband Halbleiterphysik
HL 12: HL Poster I
HL 12.21: Poster
Monday, April 1, 2019, 17:30–20:00, Poster E
Optical characterization of implanted transition metal dichalcogenides monolayers — •Minh Bui1, Jhih-Sian Tu1, Manuel Auge2, Sven Borghardt1, Eoghan O’Connell3, Ursel Bangert3, Hans Hofsäss2, and Beata Kardynał1 — 1Peter Grünberg Institut 9, Forschungszentrum Jülich, Jülich, Germany — 2II. Physikalisches Institut, Georg-August-Universität Göttingen, Göttingen, Germany — 3Department of Physics, School of Sciences and Bernal Institute, University of Limerick, Limerick, Ireland
Two dimensional semiconductors, such as monolayers (MLs) of transition metal dichalcogenides, possess some unique properties due to their band structure and geometry. In analogy to classic bulk semiconductors, it is desirable to introduce stable dopant atoms into their lattice in a controlled way for exploiting these properties. In this contribution, we investigate low energy ion implantation as a method to introduce foreign atoms into MoS2 and MoSe2 MLs. Raman, reflectance and photoluminescence spectroscopies, supported by transmission electron microscopy, are used to characterize the resulting semiconductors. Implantation of Se ions with energies below 50 eV into exfoliated MoS2 MLs is studied as a prototypical system. Substitution of S with Se atoms should convert MoS2 into MoSe2xS2(1−x) without generating free charge carriers. Implantation levels of up to few percent, much larger than needed for doping, are shown. We find that implanted ion energy is a compromise between implantation success rate and defect formation rate, and we identify the most likely defects. Similarly, results of MoSe2 implanted with P as an n-type dopant are discussed.