Regensburg 2019 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 12: HL Poster I
HL 12.3: Poster
Monday, April 1, 2019, 17:30–20:00, Poster E
Probing long-lived spin polarization in n-doped MoSe2 monolayers. — •Michael Kempf1, Markus Schwemmer1, Philipp Nagler1, Andreas Hanninger1, Christian Schüller1, and Tobias Korn2 — 1University Regensburg, 93053 Regensburg Germany — 2University Rostock, 18051 Rostock Germany
With the coupling of spin and valley degree of freedom in transition metal dichalcogenides, these materials are very well suited for valleytronics. Yet due to ultrafast exciton recombination times on the order of picoseconds, strongly limiting possible applications and other processes, it is highly advantageous to transfer the polarization to resident carriers. Utilizing time-resolved Kerr rotation we study the spin-valley dynamics in undoped and n-doped MoSe2 monolayers. In contrast to undoped samples we observe a long-lived polarization of several nanoseconds in the n-doped MoSe2, which can be explained by a polarization of resident carriers. M. Schwemmer et al., Appl. Phys. Lett. 111 (2017)