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HL: Fachverband Halbleiterphysik

HL 12: HL Poster I

HL 12.69: Poster

Montag, 1. April 2019, 17:30–20:00, Poster E

Phosphorous doped Germanium nanowires — •Ahmad Echresh, Shima Jazavandi Ghamsari, Yordan M. Georgiev, and Lars Rebohle — Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden Rossendorf, Bautzner Landstraße 400, D-01328 Dresden, Germany

Germanium (Ge) is a promising high mobility channel material for future nanoelectronic devices with a lower effective charge carrier mass than Silicon (Si) and higher electron and hole mobility. Materials with high carrier mobility can enable increased integrated circuit functionality. Hence, Ge based nanoelectronic devices could offer improved performance at reduced power consumption compared to Si electronics. In this work, Ge nanowires were fabricated using electron beam lithography (EBL) and inductively coupled plasma (ICP) etching. Then ion beam implantation was used to introduce phosphorous (P) dopant atoms into the Ge nanowires. Afterwards, flash lamp annealing (FLA) was applied to recover the crystal structure of the Ge nanowires and activate the dopant atoms. Micro-Raman spectroscopy spectra showed that by increasing the fluence of ion implantation, the peak of optical phonon mode in Ge was broadened asymmetrically which shows that dopant atoms are electrically activated. Moreover, we are designing Hall Effect measurement configurations for single Ge nanowires to determine their mobility and carrier concentrations.