Regensburg 2019 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 13: Focus Session: GaN-based single photon emitters
HL 13.1: Invited Talk
Tuesday, April 2, 2019, 09:30–10:00, H31
GaN-based quantum dot single photon sources at room temperature — •Yasuhiko Arakawa1, Mark Holmes1,2, and Munetaka Arita1 — 1Institute for Nano Quantum Information Electronics, The University of Tokyo, Tokyo, Japan — 2Institute of Industrial Science, The University of Tokyo
III-Nitride quantum dots, with their large band offsets and wide range of bandgaps, are promising nanostructures for room temperature quantum information technologies. Growth of high-quality GaN/AlN quantum dots was reported by metal organic C chemical vapor deposition (MOCVD) with Stanski-Krastnanov growth mode in 2002. The quantum dots exhibited a large biexciton binding-energy and a strong phonon interaction, leading to observation of a single photon at 200 K in 2006. However, the magnitude of the binding energy of biexciton was not large enough to realize single photon emission at room temperature.
In this presentation, we discuss our recent progress in GaN-based single photon emitters operating at/above room temperature. A position controlled GaN/AlGaN nanowire quantum dot, with a typical lateral dimension of 10 nm and a vertical dimension of 1 nm, was grown by selective area MOCVD. A large binding energy of biexciton (> 60meV) in the quantum dot was realized, which enabled single photon emission at 350 K (77C). In addition, we also discuss interface-fluctuation GaN/AlN quantum dots for realizing high quality single photon emission. We obtained a measured raw g(2)(0) value smaller than 0.1 at 10 K, demonstrating the remarkable nature of these quantum dots.