Regensburg 2019 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 13: Focus Session: GaN-based single photon emitters

HL 13.2: Invited Talk

Tuesday, April 2, 2019, 10:00–10:30, H31

Quantum light generation based on group III-nitride semiconductor nanophotonic structures — •Yong-Hoon Cho — Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea

We present quantum light generation and control with various group III-nitride semiconductor nanophotonc structures. We fabricated three-dimensional GaN-based semiconductor nano- and micro-structures, which was followed by the growth of quantum structures by metal-organic chemical vapor deposition. We demonstrated ultrafast and highly directional single photon generation from a quantum dot formed at the apex of pyramid structures, the self-aligned deterministic coupling of single quantum dot (QD) to nanofocused plasmonic modes, and exciton-polariton formation and condensation at room-temperature using GaN-based rod structures. Our approaches overcome the major hurdles in implementing practical solid-state quantum devices operating at room temperature and also show great promise for versatile quantum photonic applications.