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HL: Fachverband Halbleiterphysik

HL 13: Focus Session: GaN-based single photon emitters

HL 13.5: Vortrag

Dienstag, 2. April 2019, 11:30–11:45, H31

Pyramids on N-face GaN for the aim of light emitting quantum dot structures — •Uwe Rossow¹, Fedor Ketzer¹, Angelina Jaros², Tobias Voss², Hendrik Spende², Andreas Waag², Philipp Henning¹, Philipp Horenburg¹, Heiko Bremers¹, and Andreas Hangleiter¹ — ¹Technische Universität Braunschweig, Institut f. Angewandte Physik, 38106 Braunschweig — ²Technische Universität Braunschweig, Institut f. Halbleitertechnik, 38106 Braunschweig

Semiconductor nanostructures are very promising for single photon emitters near or at room temperature. The group-III nitrides are especially interesting in this respect since the bandgap of In_xGa_1−xN can in principle be tuned over the whole wavelength range from the near IR to the near UV. Quantum dots based on self-organized growth, in the top of pyramids, and embedded in nanorods have been investigated. The latter two cases are better suited if individual single photon emitters need to be addressed. Unfortunately, if such nanostructures are formed during growth, indium incorporation on side facets, edges, and tip varies and it is difficult to maintain a homogeneous composition.

Here we report on a new process to produce pyramids on the basis of GaN. First we grow InGaN/GaN (single or multi) quantum well structures on N-face GaN by MOVPE. In a second step pyramids are formed by KOH etching. We demonstrate that pyramids with sharp tips can be achieved which show blue-shifted photoluminescence. We aim to optimize the efficiency to allow the realization of arrays of single photon emitters with similar emission properties.