Regensburg 2019 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 13: Focus Session: GaN-based single photon emitters
HL 13.6: Invited Talk
Tuesday, April 2, 2019, 11:45–12:15, H31
Nitride single photon sources: quantum dots and defects — •Rachel Oliver1, Tongtong Zhu1, Igor Aharonovich2, and Robert Taylor3 — 1Dept. of Materials Science, University of Cambridge, U.K. — 2Faculty of Science, University of Technology Sydney, Australia — 3Dept. of Physics, University of Oxford, U.K.
Single photon sources are a key enabling technology for quantum communications, and in the future more advanced quantum light sources may underpin other quantum information processing paradigms such as linear optical quantum computation. In considering practical implementations of quantum technologies, the nitride materials system is attractive since it allows single photon emission at accessible temperatures, potentially enabling the implementation of quantum key distribution in contexts where cryogenic cooling is impracticable. The wide variation in bandgap across the nitride semiconductors allows access to a vast range of wavelengths from the infra-red to the ultra-violet spanning the visible spectrum.
In the visible region, both epitaxial InGaN quantum dots (QDs) and defects in GaN have been demonstrated as single photon emitters. QDs currently are easier to engineer and to incorporate into device structures. Non-polar QDs in particular offer attractive advantages in terms of short radiative lifetimes and deterministically polarised emission. Whilst single photon emission from non-polar InGaN QDs has been demonstrated at temperatures up to 220 K, defects in GaN allow room temperature single photon emission and present an exciting option for the development of for integrated quantum photonic circuitry.