Regensburg 2019 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 13: Focus Session: GaN-based single photon emitters
HL 13.7: Hauptvortrag
Dienstag, 2. April 2019, 12:15–12:45, H31
GaN-based single photon emitters — •Donat Josef As — University of Paderborn, Department of Physics, Warburger Str. 100, 33098 Paderborn
Single-photon emission from cubic GaN/AlN quantum dots grown by molecular beam epitaxy is shown. Two different growth methods: the droplet epitaxy technique and the Stranski-Krastanov growth mode were used to fabricate single zinc-blende GaN/AlN quantum dots. By micro-photoluminescence we observed spectrally clean and isolated emission peaks from both kind of quantum dots. Clear single-photon emission was detected by analyzing one such peak at 4K and a g(2)[0] value of 0.25 was estimated, which becomes 0.05 by correcting the background and detector dark counts. Both excitonic and multi-excitonic recombinations in individual quantum dots with radiative lifetimes shorter than 287± 68 ps are demonstrated. Due to the large band offsets and a large exciton binding energy, the excitonic recombinations of single zinc-blende GaN/AlN quantum dots can be observed up to 300 K. These results indicate that cubic GaN quantum dots are possible candidates for high-temperature operating UV single-photon sources with the possibility of integration into photonic nanostructures.