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HL: Fachverband Halbleiterphysik
HL 16: Focus Session: Oxide Semiconductors for Novel Devices III
Dienstag, 2. April 2019, 09:30–13:15, H34
Organizers: Holger Eisele (TU Berlin) and Holger von Wenckstern (Uni Leipzig)
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09:30 | HL 16.1 | Mechanical properties of HfO2−x and ZrO2−x suboxides — •Konstantin Z. Rushchanskii, Stefan Blügel, and Marjana Ležaić |
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09:45 | HL 16.2 | Protective coatings for photoelectrochemical applications — •David Silva, Oliver Bienek, and Ian Sharp |
| 10:00 | HL 16.3 | The contribution has been withdrawn. | |
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10:15 | HL 16.4 | Simulation of retention and endurance in memristive devices — •Max Huber, Jörg Schuster, and Michael Schreiber |
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10:30 | HL 16.5 | Investigating the Memristive Behavior of Hydrothermally Grown TiO2 Nanorod Arrays — •Carola Ebenhoch, Julian Kalb, Joohyun Lim, Christina Scheu, and Lukas Schmidt-Mende |
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10:45 | HL 16.6 | Structural, electronic and magnetic properties of Iron doped hexagonal BaTiO3: First principles investigation — •Waheed A. Adeagbo, Sanjeev K. Nayak, Hichem B. Hamed, Hans T. Langhammer, Rolf Böttcher, and Wolfram Hergert |
| 11:00 | 15 min. break | ||
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11:15 | HL 16.7 | Molecular beam epitaxy of SnO: Investigation of growth parameters including the comparison of a Sn and a SnO source — •Melanie Budde, Georg Hoffmann, and Oliver Bierwagen |
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11:30 | HL 16.8 | Structural, optical and electrical properties of orthorhombic (InxGa1−x)2O3 thin films — •A. Hassa, H. von Wenckstern, D. Splith, C. Sturm, M. Kneiss, C. Krömmelbein, and M. Grundmann |
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11:45 | HL 16.9 | Temperature dependence of the Seebeck coefficient of epitaxial β-Ga2O3 thin films — •Johannes Boy, Martin Handwerg, Robin Ahrling, Rüdiger Mitdank, Günter Wagner, Zbigniew Galazka, and Saskia F. Fischer |
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12:00 | HL 16.10 | Realization of MESFET and inverter devices based on Mg-doped In2O3 — •Fabian Schöppach, Robert Karsthof, Daniel Splith, Holger von Wenckstern, and Marius Grundmann |
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12:15 | HL 16.11 | Integrated Logic Circuits Based on Amorphous Zinc-Tin-Oxide Thin Films Processed at Room Temperature — •Oliver Lahr, Sofie Vogt, Holger von Wenckstern, and Marius Grundmann |
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12:30 | HL 16.12 | IR-Vis-UV optical properties of α-Ga2O3 films grown by halide vapor phase epitaxy — •Pingfan Ning, Martin Feneberg, Jürgen Bläsing, Hoki Son, Dae-Woo Jeon, and Rüdiger Goldhahn |
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12:45 | HL 16.13 | Influence of strain on yellow excitons in cuprous oxide with different principle quantum numbers — •Patric Rommel, Christoph Uihlein, and Jörg Main |
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13:00 | HL 16.14 | Tuning functionality at the nanoscale — •Donald M. Evans, Theodor. S. Holstad, Aleksander. B. Mosberg, Per-Erik Vullum, Didirik Småbråten, Zewu Yan, Sverre Selbach, Antonius Van Helvoort, and Dennis Meier |