Regensburg 2019 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 2: Nitrides: Devices

HL 2.8: Talk

Monday, April 1, 2019, 11:30–11:45, H31

Study of heavy-ion irradiation induced degradation on AlInN/GaN on Si High- Electron-Mobility Transistors (HEMTS) — •Seshagiri rao Challa¹, Nahuel Vega^2,3,4, Christian Kristukat^2,3, Nahuel a Müller², Mario Debray^2,3, Gordon Schmidt¹, Jürgen Christen¹, Florian Hörich¹, Hartmut Witte¹, Armin Dadgar¹, and André Strittmatter¹ — ¹Institut für Physik, Otto-von-Guericke-Universität Magdeburg, Germany — ²Gerencia de Investigación y Aplicaciones, CNEA, Argentina — ³Escuela de Ciencia y Tecnología, Universidad Nacional de San Martín(UNSAM), Argentina — ⁴Consejo Nacional de Investigaciones Científicas y Tecnológicas (CONICET), Argentina

75 MeV sulfur-ion irradiation induced degradation on AlInN/GaN on Si high electron mobility transistor (HEMT) structures are systematically studied for ion fluences ranging from 2.8×10¹² cm⁻² to 5.5×10¹³ cm⁻². Ion stopping range, ionization vs displacement energy loss profile, and recoil atom distributions were simulated using SRIM software tool (Stopping and range of ions in matter). Transfer curves show a reduction of on-state current, off-state current (buffer leakage), and a positive threshold voltage shift with higher fluences as well as an increase of vertical conductivity by up to eight orders of magnitude. µ-PL measurements show an intensity reduction of the donor bound exciton (D0,X) emission in the GaN buffer layer with increasing fluences. Although performance is degraded, all HEMTs remain fully functional even at highest irradiation levels, which makes them an attractive choice to space applications.