Regensburg 2019 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 2: Nitrides: Devices
HL 2.9: Vortrag
Montag, 1. April 2019, 11:45–12:00, H31
InGaN/GaN microLED arrays as a novel illumination source for imaging and microscopy — •Jan Gülink1,2, Michael Fahrbach1,2, Daria Bezshlyakh1,2, Hutomo Suryo Wasisto1,2, and Andreas Waag1,2 — 1Institute of Semiconductor Technology (IHT), Technische Universität Braunschweig, Hans-Sommer-Str. 66, D-38106 Braunschweig, Germany — 2Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, Langer Kamp 6a, D-38106 Braunschweig, Germany
Gallium nitride-based light emitting diodes (LEDs) have developed over the last two decades into highly efficient, cost-effective and compact light sources. While solid state lighting has been the dominant application so far, a number of other applications can take advantage of the LED's benefcial properties, including displays, optical communication, sensing and manipulation in life sciences, and structured illumination.
In this work, we report on a novel light source based on two different top-down fabrication technologies on a planar gallium nitride(GaN)-based LED wafer. We realized highly localized light sources with pitches in the range of 2 microns to 100 microns with individual pixel control, a so-called microLED array. The LED array consists of 64 pixels. The technological details of the 3D processing steps to create the microLED arrays are presented in detail. The microLED arrays were then transferred via flip-chip bonding to PCBs including the driver circuit and their brightness, emission pattern and modulation speed were investigated.