Regensburg 2019 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 22: Quantum dots and wires: Transport properties
HL 22.6: Talk
Tuesday, April 2, 2019, 15:15–15:30, H34
Multigate Structures for the Realization of Electrostatically Tunable Devices — •Thomas Grap1,2, Felix Riederer1, and Joachim Knoch1 — 1Institute of Semiconductor Electronics, RWTH Aachen, Germany — 2Peter Grünberg Institute 11, FZ Jülich, Germany
One-dimensional (1-D) materials such as nanowires (NW) and nanotubes (NT) have attracted a great deal of attention as buildings blocks of future nanoelectronics systems. This interest is in part due to the small geometry that allows realizing optimum scalability of the devices. In addition, NW and NT enable one-dimensional electronic transport that has a number of benefits such as a rather long mean free path for scattering.
In order to characterize such nanostructures, we developed a template structure, which allows to electrostatically tune 1-D materials on the nanoscale and thus exploit quantum effects. We present a study on a multi-gate device architecture where a large number of buried gates (on the order of 10 and more) are fabricated in a damascenelike process. The gates exhibit lengths well below 10nm and are placed next to each other with a few nanometers inter-gate distance. Each gate is contacted individually via Ebeam-lithography, so that this device-layout enables a tight control over the potential distribution within a 1-D nanostructure. First measurements of the electronic transport along a VLS-grown InAs-NW by applying appropriate voltages to the buried multi-gates are presented.