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09:30 |
HL 24.1 |
Band Offset at the Ga(N,As,P)/GaP Heterointerface — •Florian Dobener, Sebastian Gies, Jan O. Oelerich, Peter Ludewig, Kerstin Volz, Stephan W. Koch, Wolfgang Stolz, Wolfram Heimbrodt, and Sangam Chatterjee
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09:45 |
HL 24.2 |
Growth rate reduction of cubic III-nitrides at high doping levels in molecular beam epitaxy — •Michael Deppe, Jürgen W. Gerlach, Thomas Riedl, Jörg K. N. Lindner, Dirk Reuter, and Donat J. As
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10:00 |
HL 24.3 |
Molecular beam epitaxial growth of GaZnON layers for photocatalytic applications — •Elise Sirotti, Max Kraut, Florian Pantle, Marvin Koch, and Martin Stutzmann
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10:15 |
HL 24.4 |
All-optical determination of free-carrier concentration and composition in cubic GaN and AlGaN — •Elias Baron, Michael Deppe, Fabian Tacken, Donat Josef As, Martin Feneberg, and Rüdiger Goldhahn
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10:30 |
HL 24.5 |
Photo-induced selective etching of GaN nanowires in water — •Florian Pantle, Max Kraut, Julia Winnerl, Martin Hetzl, Felix Eckmann, and Martin Stutzmann
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10:45 |
HL 24.6 |
Integrated GaN Light Emitting Diode - GaN Nanowire Devices for Photocatalysis — •Sabrina Artmeier, Julia Winnerl, and Martin Stutzmann
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11:00 |
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15 min. break
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11:15 |
HL 24.7 |
Optical properties of homoepitaxial AlGaN/GaN MQWs — •Markus Schleuning, Markus Wagner, Benjamin Damilano, and Axel Hoffmann
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11:30 |
HL 24.8 |
Effect of optimized GaN underlayers on the radiative efficiency of GaInN/GaN quantum wells — •Philipp Horenburg, Philipp Henning, Savutjan Sidik, Uwe Rossow, Heiko Bremers, and Andreas Hangleiter
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11:45 |
HL 24.9 |
Reactive pulsed sputtering of AlN and GaN — •Florian Hörich, Christopher Kahrmann, Jürgen Bläsing, Armin Dadgar, and André Strittmatter
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12:00 |
HL 24.10 |
Influence of Electron Beam Irradiation on the Emission Spectra of InGaN/GaN MQWs — •Hendrik Spende, Johannes Ledig, Christoph Margenfeld, Hergo-Heinrich Wehmann, and Andreas Waag
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12:15 |
HL 24.11 |
Thermal activation of non-radiative recombination processes in III-nitride quantum wells — •Philipp Henning, Torsten Langer, Fedor Alexej Ketzer, Silvia Müllner, Philipp Horenburg, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter
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12:30 |
HL 24.12 |
Dislocation bending in GaN/step-graded (Al,Ga)N/AlN buffer layers on Si(111) investigated by STM and STEM — •Yuhan Wang, Lei Zhang, Verena Portz, Michael Schnedler, Lei Jin, Xiaopeng Hao, Holger Eisele, Rafal E. Dunin-Borkowski, and Philipp Ebert
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12:45 |
HL 24.13 |
Electron affinity and surface states of GaN m-plane facets: Implication for electronic self-passivation — Verena Portz, Michael Schnedler, Holger Eisele, Rafal E. Dunin-Borkowski, and •Philipp Ebert
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