Regensburg 2019 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 24: Nitrides: Preparation and characterization I

HL 24.3: Vortrag

Mittwoch, 3. April 2019, 10:00–10:15, H31

Molecular beam epitaxial growth of GaZnON layers for photocatalytic applications — •Elise Sirotti, Max Kraut, Florian Pantle, Marvin Koch, and Martin Stutzmann — Walter Schottky Institut and Physics Department, Technische Universität München, Am Coulomb-wall 4, 85748 Garching, Germany

GaN and ZnO have a favorable energy position of their band edges with respect to the redox levels of many electro-chemical reactions. Still, their large band gap limits the use for simultaneous solar light absorption and photocatalytic activity. One possibility to tune the bandgap into the visible regime are compounds of Ga, Zn, O, N, for which the valence band edge can be shifted to higher energies with respect to the vacuum level without affecting the conduction band energy.

We present the growth of GaZnON layers by means of plasma-assisted molecular beam epitaxy (MBE) on c-plane sapphire. The quality and composition of the quaternary compound have been optimized by varying the temperature, metal fluxes and nitrogen-to-oxygen ratio during deposition. We performed photothermal deflection spectroscopy, transmission, and photoluminescence measurements to investigate the optical properties, as well as, AFM and Raman spectroscopy for insights into the structural properties of the as-grown layers. Furthermore, the MBE-growth of GaN\GaZnON nanowire (NW) core\shell structures is demonstrated. This geometry benefits from the efficient outcoupling of light from backside illumination through the GaN NWs and the promising catalytic properties of the GaZnON shells.