Regensburg 2019 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 24: Nitrides: Preparation and characterization I

HL 24.6: Vortrag

Mittwoch, 3. April 2019, 10:45–11:00, H31

Integrated GaN Light Emitting Diode - GaN Nanowire Devices for Photocatalysis — •Sabrina Artmeier, Julia Winnerl, and Martin Stutzmann — Walter Schottky Institut and Phyics Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany

Gallium nitride (GaN) nanowires (NWs) have attracted much interest for device fabrication due to their large surface-to-volume ratio and their optical waveguide character. Moreover, the favorable energy position of their bands with respect to many redox potentials in liquid electrolytes make them promising candidates for photocatalytic applications, such as water splitting or CO2 conversion. GaN NWs integrated on a planar light emitting diode (LED), serving as a platform for photocatalytic reactions, enable the efficient coupling of the light from the LED to the waveguide modes supported within the NWs.

Using an LED as the light source for photocatalytic reactions enables the choice of a specific wavelength, which is matched to the photocatalytic reaction targeted, and pulsed operation, which is matched to the chemical reaction kinetics. Here, we present a systematic study of the time-resolved electroluminescence (EL) emitted from an LED operated in pulsed mode and coupled out through different GaN NW arrays. We have investigated the influence of the pulse length, the pulse form as well as the NW array geometry, namely the NW diameter and the period and compared the results to those of a bare LED. We found different behaviour of the turn-on delay time, the rise and the decay time for the different samples investigated.