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09:30 |
HL 25.1 |
Room-temperature coherent electrical readout of silicon vacancy defect spins in silicon carbide — •Matthias Niethammer, Matthias Widmann, Torsten Rendler, Naoya Morioka, Yu-Chen Chen, Rainer Stöhr, Jawad Ul Hassan, Sang-Yun Lee, Amlan Mukherjee, Junichi Isoya, Nguyen Tien-Son, and Jörg Wrachtrup
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09:45 |
HL 25.2 |
Investigation of the Temperature Dependence of the Critical Points E0 and E0+Δ0 of Bulk Ge — •Carola Emminger, Nuwanjula Samarasingha, Farzin Abadizaman, and Stefan Zollner
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10:00 |
HL 25.3 |
Application of Flash Lamp Annealing for Controlled Nickel Silicidation of Silicon Nanowires — •Muhammad Bilal Khan, Dipjyoti Deb, Slawomir Prucnal, Artur Erbe, and Yordan M. Georgiev
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10:15 |
HL 25.4 |
Engineering the light emission properties of hexagonal Ge by structural modifications — •Jens Renè Suckert, Claudia Rödl, Jürgen Furthmüller, Friedhelm Bechstedt, and Silvana Botti
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10:30 |
HL 25.5 |
Atomic Effective Pseudopotentials for Large Scale Defect Calculations — •Walter Pfäffle and Gabriel Bester
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10:45 |
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15 min. break
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11:00 |
HL 25.6 |
Group IV Nanowires: Fabrication and Particular Applications — •Yordan M. Georgiev, Muhammad Bilal Khan, Dipjyoti Deb, Ahmad Echresh, Shima J. Ghamsari, Slawomir Prucnal, Lars Rebohle, Artur Erbe, Manfred Helm, Anushka S. Gangnaik, Alexander D. Game, Subhajit Biswas, Nikolay Petkov, and Justin D. Holmes
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11:15 |
HL 25.7 |
The contribution has been withdrawn.
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11:30 |
HL 25.8 |
Ordered Si nanopillar arrays with alternating diameters by metal-assisted chemical etching — •Michael Kismann, Thomas Riedl, Xia Wu, Bertram Schwind, Thorsten Wagner, and Jörg K.N. Lindner
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11:45 |
HL 25.9 |
Time-resolved spectroscopic ellipsometry on Ge and Si — •Steffen Richter, Shirly Espinoza, Oliver Herrfurth, Mateusz Rebarz, Rüdiger Schmidt-Grund, Jakob Andreasson, and Stefan Zollner
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