Regensburg 2019 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 25: Group IV (other than C): Si/Ge/SiC
HL 25.1: Vortrag
Mittwoch, 3. April 2019, 09:30–09:45, H33
Room-temperature coherent electrical readout of silicon vacancy defect spins in silicon carbide — •Matthias Niethammer1, Matthias Widmann1, Torsten Rendler1, Naoya Morioka1, Yu-Chen Chen1, Rainer Stöhr1, Jawad Ul Hassan3, Sang-Yun Lee2, Amlan Mukherjee1, Junichi Isoya4, Nguyen Tien-Son3, and Jörg Wrachtrup1,5 — 13rd Institute of Physics, IQST and SCOPE, University of Stuttgart — 2Korea Institute of Science and Technology — 3Linköping University — 4University of Tsukuba — 5Max Planck Institute for Solid State Research
4H-Silicon Carbide (SiC) is a matured semiconductor with advanced manufacturing technology and is widely used in the power electronics industry. Recently, it has gained lot of attention as a host material for point defects which can be exploited to build quantum sensors. Optical readout of single spin defects with long-lived coherence has already been demonstrated at room temperature. Here we combine the quantum properties of the spin defects in SiC with electrical readout. We demonstrate, electrical readout of the spin state of an silicon vacancy (VSi−) ensemble in SiC at room temperature using two-photon absorption and photo-current detection technique in a metal-semiconductor-metal device. We show coherent control of the spin states indicating spin preserving nature of the electrical readout technique. Such a technique apart from being scalable, is also compatible with advanced control techniques, which can be directly adapted from the optical domain for an increased sensitivity or other sensing purposes.