Regensburg 2019 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 25: Group IV (other than C): Si/Ge/SiC
HL 25.6: Vortrag
Mittwoch, 3. April 2019, 11:00–11:15, H33
Group IV Nanowires: Fabrication and Particular Applications — •Yordan M. Georgiev1, Muhammad Bilal Khan1, Dipjyoti Deb1, Ahmad Echresh1, Shima J. Ghamsari1, Slawomir Prucnal1, Lars Rebohle1, Artur Erbe1, Manfred Helm1, Anushka S. Gangnaik2, Alexander D. Game2, Subhajit Biswas2, Nikolay Petkov2, and Justin D. Holmes2 — 1Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany — 2School of Chemistry and Tyndall National Institute, University College Cork, Cork, Ireland
Group IV semiconductor nanowires (NWs) are very attractive because of the variety of possible applications as well as of the good silicon (Si) compatibility, which is important for their integration into the existing semiconductor technology. We will give an overview of our activities on fabrication and application of group IV NWs. These include top-down fabrication (based on electron beam lithography and reactive ion etching) of Si and germanium (Ge) NWs having widths down to 6-7 nm as well as bottom-up (vapour-liquid-solid) growth of alloyed germanium-tin (Ge1-xSnx) NWs with x = 0.07-0.1 and diameters of 50-70 nm. We will discuss the innovative nanoelectronic devices that we are working on: junctionless nanowire transistors (JNTs) and reconfigurable field effect transistors (RFETs). We will present results on Si JNTs for sensing application as well as on Ge and GeSn JNTs for digital logic. We will also show results on Si RFETs as well as preliminary data on SiGe and GeSn RFETs, which are expected to outperform the Si RFETs.