Regensburg 2019 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 3: Semiconductor lasers and Photonic crystals
HL 3.2: Talk
Monday, April 1, 2019, 09:45–10:00, H33
Do TMD Nanolasers Benefit From a High β-Factor? — •Frederik Lohof1, Alexander Steinhoff1, Matthias Florian1, Daniel Erben1, Michael Lorke1, Roy Barzel1, Paul Gartner2, Frank Jahnke1, and Christopher Gies1 — 1Institute for Theoretical Physics, University of Bremen — 2National Institute of Materials Physics, CIFRA, Bucharest-Măgurele, Romania
The realization of high-β lasers is one of the prime applications of cavity- QED promising ultra-low thresholds, integrability and reduced power consump- tion. Recently also monolayers of transition metal dichalcogenide (TMD) have been reported to be used as gain medium in high-β nanolasers. In my talk I will present first results from material realistic gain calculations of highly excited TMD monolayers and specify requirements to achieve lasing with the four commonly used TMD semiconductors. Combining the results with a rate equation theory I will discuss consequences for experimentally accessible laser characteristics. In cavity-enhanced nanolasers with limited amount of gain, spontaneous emission has been shown to play a central role even above the threshold. In using a simplified approach, I will discuss the prospects of low-threshold high- beta lasing in TMD based nanolasers. Extended rate equations are used to access the photon autocorrelation function, revealing an offset between the laser threshold in the input-output curve and the transition to coherent emission. Furture experimental measurements should provide insight into the validity of our theoretical prediction.