Regensburg 2019 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 31: Nitrides: Preparation and characterization II
HL 31.1: Vortrag
Mittwoch, 3. April 2019, 15:00–15:15, H31
GaN/AlGaN Microfin Core-Shell-Structures for Efficient DUV Emitters — •Christoph Margenfeld1, Hendrik Spende1, Hao Zhou1, Hans-Jürgen Lugauer2, Hergo-Heinrich Wehmann1, and Andreas Waag1 — 1Institut für Halbleitertechnik, epitaxy competence center ec2 and Laboratory for Emerging Nanometrology, Technische Universität Braunschweig, Braunschweig, Germany — 2Osram Opto Semiconductors GmbH, Regensburg, Germany
Conventional DUV LEDs grown on c-plane sapphire substrates suffer from a high density of threading dislocations, which sensitively affects the internal quantum efficiency (IQE), an increasing fraction of TM mode radiation leading to low light extraction efficiency (LEE), and impaired carrier injection efficiency as a result of strong polarization fields. These issues can be circumvented by employing three-dimensional AlGaN microstructures with nonpolar sidewalls.
A GaN/AlGaN core-shell architecture based on microfin structures grown by selective area MOVPE is introduced and the solutions to challenges occurring during growth are discussed. Characterization by XRD reciprocal space mapping, hyperspectral CL mapping and temperature-dependent CL reveals very promising results such as high structural quality, low threading dislocation density and intense emission from nonpolar a-plane MQWs at 280 nm up to 100 ∘C.