Regensburg 2019 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 31: Nitrides: Preparation and characterization II
HL 31.2: Talk
Wednesday, April 3, 2019, 15:15–15:30, H31
Excess carrier density dependent recombination dynamics on GaN quantum wells — •Silvia Müllner1, Philipp Hornburg1, Philipp Henning1, Heiko Bremers1,2, Uwe Rossow1, and Andreas Hangleiter1,2 — 1Institute of Applied Physics, TU Braunschweig, Germany — 2Laboratory for Emerging Nanometrology, Braunschweig, Germany
Recombination dynamics in quantum wells (QW) are commonly described by the ABC-model. Previous results from c-plane GaN QW and recent results from m-plane GaN QW, however, disagree with this model. Our time-resolved photoluminescence experiments provide information on recombination dynamics. By tuning the pulse energy density, Ppulse, the excess carrier density, δ n, is varied systematically. The low injection region shows a linear dependence between the radiative process and δ n suggesting a recombination process of excitonic nature, which is neglected in the ABC-model. The recombination dynamics in these QW will be compared and discussed for both orientation.