Regensburg 2019 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 31: Nitrides: Preparation and characterization II
HL 31.5: Vortrag
Mittwoch, 3. April 2019, 16:15–16:30, H31
Optical and structural properties of one-directionally lattice-matched (1122) oriented Al1−xInxN/GaN heterostructures — •Savutjan Sidik1, Philipp Horenburg1, Heiko Bremers1, Uwe Rossow1, Tobias Meisch2, Ferdinand Scholz2, and Andreas Hangleiter1 — 1Institut für Angewandte Physik, Technische Universität Braunschweig — 2Institut für Optoelektronik, Universität Ulm
The difference of a/c-ratios of AlInN and GaN allows to realize an intentional one-directional relaxation of the AlInN lattice in a non-lattice-matched direction in semipolar structures. We investigate the evolution of emission features and polarization anisotropy of semipolar (1122) AlInN samples by varying the layer thicknesses and compositions. These samples are grown via MOVPE on (1122) GaN templates grown on patterned r-sapphire substrates. The room temperature photoluminescence spectroscopy (PL) results show a broad luminescence band at around 3.0 eV from AlInN layers intended to be lattice-matched in [1123] direction. Also, the spectral position of samples is red-shifted with increasing indium content. However, samples with lower In content do not show luminescence related to AlInN which is also observed in our c-plane AlInN structures. We investigate the effects of relaxation and anisotropic strain on polarization anisotropy of AlInN layers with a polarization-resolved PL setup. The measurements reveal polarization of 34%, 23% and 21% for samples with In content of 26.9%, 28.4% and 28.8%, respectively. Modeling of polarization properties based on k · p calculation by considering the anisotropic strain is in progress.