Regensburg 2019 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 33: Quantum light sources
HL 33.4: Vortrag
Mittwoch, 3. April 2019, 15:45–16:00, H34
Deterministically positioned InAs quantum dots in heterogeneous GaAs silicon integrated quantum photonic devices — •Peter Schnauber1, Anshuman Singh2,3, Johannes Schall1, Jin-Dong Song4, Sven Rodt1, Kartik Srinivasan2, Stephan Reitzenstein1, and Marcelo Davanco2 — 1Inst. fuer Festkoerperphysik, TU Berlin — 2Nat. Inst. of Standards and Technology, Gaithersburg — 3MD NanoCenter, Uni. of Maryland — 4KIST, Seoul
Through heterogeneous integration, III-V single photon emitters based on quantum dots (QDs) can be combined with low-loss, mature silicon-based photonic chips[1]. Recently, GaAs with InAs QDs has been wafer-bonded on SiN-SiO2, and on the wafer-stack hybrid photonic devices were produced in which single photon emission from randomly aligned QDs is first captured into GaAs waveguides (WGs), then directed into SiN WGs via adiabatic mode transformers[2]. Here, using in-situ electron beam lithography[3] we integrate single pre-selected InAs QDs inside GaAs WG tapers and combine them with SiN WGs in such a hybrid system. High resolution micro-PL in p-shell excitation shows QD linewidthes down to 2 GHz, which indicates that the QD coherence properties are maintained during fabrication. Pulsed autocorrelation measurements with g(2)(0)<0.1 show triggered single-photon emission and two-photon interference (TPI) experiments in CW excitation reveal a raw TPI visibility of ≈ 40 % at zero time delay.
[1] Zadeh et al., Nano Letters 16, 2289 (2016)
[2] Davanco et al., Nature Communications 8, 889 (2017)
[3] Schnauber et al., Nano Letters 18, 2336 (2018)