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HL: Fachverband Halbleiterphysik

HL 33: Quantum light sources

HL 33.5: Vortrag

Mittwoch, 3. April 2019, 16:00–16:15, H34

MOVPE-grown single InGaAs quantum dots emitting in the telecom O-band with an AlAs monolayer anti-diffusion cap — •Jan Große, Nicole Srocka, Max Schlösinger, and Stephan Reitzenstein — Technische Universität Berlin, Institute for Solid State Physics, Hardenbergstraße 36, 10623 Berlin, Germany

Epitaxially grown InAs/InGaAs quantum dots (QDs) are highly attractive for the realization of bright single-photon sources in the telecom O-band at 1.3 um [1]. However, their fabrication is very challenging because they suffer from major indium diffusion problems during the deposition of a strain-reducing layer (SRL). This leads to a clustering and coupling process during the overgrowth process, which diminishes the optical quality (brightness and spectral separability) of the final QD/SRL system. Here, we present an advanced growth concept which is based on the introduction of a monolayer of AlAs between the QDs and the SRL to counteract the high surface mobility of the indium atoms. We present results on the optical and structural characterization of the modified system and discuss the effects of the AlAs monolayer on QD density and quality.

[1] Bloch, J. et al. Appl. Phys. Lett. 75, 2199 (1999).