Regensburg 2019 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 35: HL Poster II

HL 35.18: Poster

Mittwoch, 3. April 2019, 17:30–20:00, Poster E

Stopping in Gallium Arsenide — •Alrik Stegmaier and Hans Hofsäss — 2. Physikalisches Institut, Georg-August Universität Göttingen

GaAs is a technologically important III-V compound semiconductor. Doping of this material via ion implantation is common and requires an accurate understanding of the stopping process of ions. The electrical properties are further influenced by the amount of defects that are produced during irradiation, which has applications in implantation isolation or proton beam writing.

Because of this, accurate simulations are required for planning implantation, predicting defect production and even simulations of sputtering and ion induced surface dynamics.

Here we compare several common simulation methods against ex- perimental data and DFT and TDDFT simulations. We present a new software to accurately predict the implantation, sputtering and defect production of GaAs during ion irradiation.