Regensburg 2019 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 35: HL Poster II

HL 35.19: Poster

Wednesday, April 3, 2019, 17:30–20:00, Poster E

Measuring the 1D subband energies of wurtzite GaAs wires by inelastic light scattering — •Sebastian Meier, Florian Dirnberger, Paulo de Faria Junior, Jaroslav Fabian, Dominique Bougeard, and Christian Schüller — Universität Regensburg, 93040 Regensburg, Germany

Resonant Raman scattering has been performed to measure the subband energies of wurtzite GaAs nanowires. Our wires were grown by MBE using the VLS method and are nominally undoped. They have a GaAs core of down to 25  nm thickness which is protected by an AlGaAs shell. For laser excitation, we use a Ti:Sapphire laser, which can be tuned continuously in the energy region of the band gap.

In our Raman experiment, we find a number of peaks which are resonantly enhanced at different excitation energies. We interpret the peaks to stem from intersubband excitations of photoexcited electrons or holes. Therefore, every peak can be attributed to the energy splitting of different neighboring subbands. We also did PLE measurements to investigate the absorption behavior of the wires, and explain for which excitation energies Raman peaks are observable.