Regensburg 2019 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 35: HL Poster II

HL 35.1: Poster

Wednesday, April 3, 2019, 17:30–20:00, Poster E

Temperature dependent capacitance-voltage spectroscopy of self-assembled GaN quantum dot ensembles — •Carlo Alberto Sgroi¹, Julien Brault², Jean-Yves Duboz², Arne Ludwig¹, and Andreas D. Wieck¹ — ¹Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, D-44780 Bochum, Germany — ²CNRS - CRHEA, Rue Bernard Grégory, 06560 Valbonne, France

We present temperature dependent capacitance voltage (CV) measurements of charge-tunable self-assembled wurtzite GaN quantum dots (QDs) in an Al_xGa_1−xN matrix grown by MBE. GaN and its alloys have excellent properties such as their thermal stability, high thermal conductivity and wide bandgap energies which make them an ideal candidate for next-generation GaN-based power devices and QD storage devices. Due to polarization effects in wurtzite GaN/Al_xGa_1−xN heterostructure layers the band structure is deformed and large electric fields promote charge transfer through defect states. Performing temperature dependent CV spectroscopy from 200 K to 300 K we were able to observe two different charging features that we attribute to trap state and quantum dot resonances.