Regensburg 2019 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 35: HL Poster II

HL 35.22: Poster

Mittwoch, 3. April 2019, 17:30–20:00, Poster E

Influence of ohmic contact material, doping and temperature on current-induced charge carrier density change — •Zoe Fiedler, Christian Schulte-Braucks, Carlo Alberto Sgroi, Carsten Ebler, Andreas Wieck, and Arne Ludwig — Ruhr-Universität Bochum, Deutschland

The charge carrier density and mobility in heterostructures made of GaAs and AlGaAs can be varied by illumination, gate voltage and also voltage pulses applied to the ohmic contacts [Zitat: APL Christian Schulte-Braucks].
Based on the latter effect, the current-induced charge carrier density change is examined in detail both at different temperatures from 4.2K to 40K (above that, the effect subside too quickly) and with different contact materials.
The explanation of the charge carrier density change is related to DX centers, which are probably caused by a combination of donor atoms and As defects [Zitat: Mooney1990], which is why the doping method is also varied from volume doping to delta doping.
It will also be tested whether the change in charge carrier density can be reversed with voltage pulses.
The procedure and first results will be presented.