Regensburg 2019 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 35: HL Poster II
HL 35.26: Poster
Mittwoch, 3. April 2019, 17:30–20:00, Poster E
Growth of epitaxial ZnO layers on Si(111) by chemical vapor deposition with methane as reducing agent — •Okan Gelme1, Raphael Müller1, Florian Huber1, Alexander Minkow2, Ulrich Herr2, and Klaus Thonke1 — 1Institute of Quantum Matter / Semiconductor Physics Group, Ulm University, Germany — 2Institute for Functional Nanosystems, Ulm University, Germany
Epitaxial zinc oxide (ZnO) layers were grown on Si(111) substrate using a high temperature chemical vapor deposition (CVD)-based growth method. The process requires two steps, which both were investigated in detail. In the first step zinc acetate (C4H6O4Zn) is heated up and thereby elementary zinc vapor is created, which is transported in an argon flow and with the aid of pure oxygen re-oxidized, forming ZnO seed crystals on the Si substrate. In the second step ZnO powder is reduced by CH4 in order to obtain again a constant flow of elementary zinc vapor. By the provided pure oxygen the zinc vapor is re-oxidized at the spot of the substrate, which then results in the formation of a heteroepitaxial ZnO layer. For both steps the influence of different growth parameters was investigated, in order to optimize the crystal quality. The samples were characterized by scanning electron microscopy, electron backscattering diffraction, high resolution X-ray diffraction, and low temperature photoluminescence.