Regensburg 2019 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 35: HL Poster II
HL 35.28: Poster
Wednesday, April 3, 2019, 17:30–20:00, Poster E
Influence of substrate material and growth parameters on donor concentration in CVD grown ZnO layers — •Stefan Pokrivka1, Raphael Müller1, Okan Gelme1, Tom Lacmann1, Florian Huber1, Ulrich Herr2, and Klaus Thonke1 — 1Institute of Quantum Matter / Semiconductor Physics Group, Ulm University, Germany — 2Institute for Functional Nanosystems, Ulm University, Germany
In the present work, the influence of different substrate materials and growth parameters on the donor concentration in high temperature CVD grown ZnO layers is investigated. Capacitance-voltage measurements with a circular contact structure, as well as Hall measurements were performed on ZnO layers grown either directly on Si(111) or on c-plane sapphire with aluminum nitride nucleation layer underneath. These measurements show, that in the ZnO layers grown on sapphire the donor concentration is slightly higher than in samples grown on silicon. From these results and by correlation with findings from low temperature photoluminescence measurements, we conclude that aluminum diffuses from the aluminum nitride nucleation layer into the ZnO layer. Despite the fact, that the layers on silicon substrate were grown at lower temperature as compared to those grown on sapphire, we find similar donor concentrations for both cases. Furthermore, the influence of in-situ annealing for samples grown on sapphire was evaluated in order to confirm our conclusions.