Regensburg 2019 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 35: HL Poster II
HL 35.2: Poster
Wednesday, April 3, 2019, 17:30–20:00, Poster E
Quantum well states of GaN/AlN studied by angle-resolved photoelectron spectroscopy — •Felix Paßlack1, Mahdi Hajlaoui1, Stefano Ponzoni1, Mirko Cinchetti1, Thomas Zentgraf2, Donat Josef As2, and Michael Deppe2 — 1Experimentelle Physik VI, TU Dortmund, Otto-Hahn-Straße 4, 44227 Dortmund, Germany — 2Universität Paderborn, Warburger Str. 100, 33098 Paderborn, Germany
Quantum well states (QWS) are attracting a lot of interests due to their unique electronic properties. They have been used for many applications for electronic and optical devices such as diode lasers, high electron mobility transistors, thermoelectric devices, and solar cells. Understanding their ability for improving and developing new applications devices, requires experimental details of their electronic structure. In this contribution, we employ angle-resolved photoelectron spectroscopy (ARPES) to study the QWS in the GaN/AlGaN heterostructure. The experiments have been carried out at the DELTA synchrotron facility at the TU Dortmund University, where the photon energy was varied between 10 eV and 100 eV. We will compare the results with those recorded using a laser-based ARPES setup using an excitation energy of 6 eV.