Regensburg 2019 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 35: HL Poster II
HL 35.33: Poster
Wednesday, April 3, 2019, 17:30–20:00, Poster E
Influence of material supply and capping layer thickness on the density and emission properties of MOVPE grown InAs quantum dots on linear-graded InGaAs metamorphic buffers — •Robert Sittig, Diana Pfezer, Simone Luca Portalupi, Michael Jetter, and Peter Michler — Institut für Halbleiteroptik und Funktionelle Grenzflächen, Center for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart
Semiconductor quantum dots (QDs) are an excellent source of non-classical light, which is a key element for quantum information technologies. For compatibility with low-loss glass fiber communication networks, emission at telecom wavelengths is crucial.
We have recently shown single-photon emission at 1.55 µm from InAs QDs grown on a linear-graded InGaAs metamorphic buffer (MMB), which reduces the lattice misfit to the GaAs substrate. Here, we maintain the MMB design but vary the material supply during QD growth and the capping layer thickness. The influence of those parameters on the QD emission is studied via (µ-)photoluminescence spectroscopy. On the basis of the resulting spectra the QD size distribution and density is discussed, with special focus on the impact of metamorphic lattice relaxation processes.