Regensburg 2019 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 35: HL Poster II

HL 35.38: Poster

Wednesday, April 3, 2019, 17:30–20:00, Poster E

Wet chemical etching of Gaussian shaped micro lenses in GaAs to enhance the extraction efficiency of QDs — •Lena Engel, Marc Sartison, Sascha Kolatschek, Fabian Olbrich, Cornelius Nawrath, Stefan Hepp, Michael Jetter, Peter Michler, and Simone Luca Portalupi — Institut für Halbleiteroptik und Funktionelle Grenzflächen, Center for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart

Semiconductor quantum dots (QDs) are promising candidates for applications in quantum communication and quantum computing, as they show emission of single, indistinguishable photons. Since the QDs are embedded in a semiconductor environment, the extraction efficiency is firmly limited. As high brightness of the single photon source is crucial for the aforementioned applications, various mechanisms for enhancing the extraction efficiency of QDs are under current investigation, using either broadband approaches or narrow band cavity quantum electrodynamic systems. Due to their superior surface quality and variability in aspect ratio and size, wet chemically etched Gaussian shaped micro lenses have proven their applicability in broadband approaches and are auspicious suitors for more complex optical devices. We have placed them deterministically over pre-selected QDs emitting in the telecom O-band and have compared the enhancement factor and the fiber coupling efficiency for different lens geometries. FDTD simulations confirm the shaping of the emitted farfield.