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HL: Fachverband Halbleiterphysik

HL 35: HL Poster II

HL 35.39: Poster

Mittwoch, 3. April 2019, 17:30–20:00, Poster E

Correlation of Auger Recombination in Self-Assembled InAs Quantum Dots with their Opto-Electrical Properties — •Nikolai Bart¹, Nikolai Spitzer¹, Martin Geller², Axel Lorke², Andreas D. Wieck¹, and Arne Ludwig¹ — ¹Ruhr-Universität Bochum — ²Universität Duisburg-Essen

An Auger recombination is a usually undesired, non-radiative process in which the energy of an otherwise radiative exciton recombination gets absorbed by a secondary electron, thereby scattering it. By growing precisely tailored charge-tunable quantum dot devices, we aim to manipulate the conditions for Auger recombination to occur. For this, we make use of techniques such as indium-flushing and rapid thermal annealing to modify the QDs' size, shape and composition. In order to manipulate the coupling of the quantum dots to their surroundings, we predefine the tunnel barrier, which separates the QDs from an electron reservoir, suppress wettinglayer bound states or modify the QDs' capping layers. After characterization of the QDs' opto-electrical properties via photoluminescence and capacitance-voltage spectroscopy, Auger recombination rates are examined via two laser resonance fluorescence. Correlating the QDs' characteristics to the occurrence of Auger recombination might give us crucial information to further decrease the decoherence and linewidth of photons from our devices and improve their quantum efficiency.